Micron’s massive-memory-density HBM

Micron Technology has begun sampling its latest eight-high 24GB HBM3 Gen2 memory with impressive bandwidth and pin speed. Compared to current HBM3 solutions, it offers up to a 50% improvement and sets new records in AI data center metrics. With 2.5× better performance per watt than previous generations, it holds significant promise for AI applications. Micron’s HBM solution utilizes a 1β DRAM process node, enabling a 24Gb DRAM die to be assembled into an eight-high cube. A 12-high stack with 36GB capacity is planned for sampling in 2024, providing 50% more capacity than those of competitors. Micron collaborates with TSMC